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Correction to: Channel Engineering Assisted Performance Enhancement of Metal Gate Sub-10nm Ballistic SiNWFET for Futuristic Device Applications

Crossref DOI link: https://doi.org/10.1007/s12633-021-01532-3

Published Online: 2021-11-27

Published Print: 2022-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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