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Noise and Device Parameters Sensitivity Analysis of Multi-Peak-Gaussian Doped 4H-SiC Junctionless FET (MG-4H-SiC-JLFET)

Published Online: 2022-02-09

Published Print: 2022-10

Authors

Singh, Sangeeta https://orcid.org/0000-0002-1185-0540
Kumari, Arti

Mohammed, Mustafa K. A.
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Text and Data Mining valid from 2022-02-09

Version of Record valid from 2022-02-09
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Article History

Received: 15 October 2021

Accepted: 20 December 2021

First Online: 9 February 2022

Declarations

:

: We comply to the ethical standards. We provide our consent to take part.

: All the authors are giving consent to publish.

: No conflict of interest to disclose.

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