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Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range

Crossref DOI link: https://doi.org/10.1007/s12633-021-01640-0

Published Online: 2022-01-10

Published Print: 2022-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Demirezen, S. https://orcid.org/0000-0001-7462-0251
Çetinkaya, H. G.

Altındal, Ş.
Funding

Funding for this research was provided by:

Amasya Üniversitesi (FMB-BAP 18-0319)

Gazi Üniversitesi (BAP.05/2019-26)
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Text and Data Mining valid from 2022-01-10

Version of Record valid from 2022-01-10
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Article History

Received: 8 September 2021

Accepted: 24 December 2021

First Online: 10 January 2022

Declarations

: The manuscript has not been published elsewhere and has not been submitted simultaneously for publication elsewhere.

: This project involved a number of techniques and data analysis to evaluate the Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range. And I agree to publish this manuscript in Journal of Silicon.

: All the authors hope this work to be consider by Journal of Silicon and publishing in it.

: This article does not contain any studies with human participants or Animals performed by any of the authors.

: The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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