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Investigation on DC/RF Performance of LG = 19 nm Heterogeneous Integrated Ga0.15In0.85As/InAs/Ga0.15In0.85As Composite Channel InP HEMT on Silicon Substrate for Future Beyond 5G and Quantum Computing Applications

Crossref DOI link: https://doi.org/10.1007/s12633-022-01719-2

Published Online: 2022-02-03

Published Print: 2022-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Bhattacharya, Sandip

Ajayan, J.

D.Nirmal,

Tayal, Shubham

Kollem, Sreedhar

Joseph, L. M. I. Leo
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Text and Data Mining valid from 2022-02-03

Version of Record valid from 2022-02-03
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Article History

Received: 19 December 2021

Accepted: 26 January 2022

First Online: 3 February 2022

Declarations

: The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

: Not applicable.

: Not applicable as the manuscript does not contain any data from individual.

: The authors declare that there is no conflict of interest reported in this paper.

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