Sujatha, G.
Mohankumar, N.
Poornachandran, R.
Saravanakumar, R.
Pandian, M. Karthigai
Article History
Received: 23 November 2021
Accepted: 20 February 2022
First Online: 9 March 2022
Declarations
:
: Authors freely agreed and gave their consent for the publication of the paper.
: We declare that the manuscript entitled “<b>Influence of barrier with gate sinking on the performance of InAs Composite Channel DMDG-HEMT Devices for High-Frequency Applications</b>” is original, has not been full or partly published before, and is not currently being considered for publication elsewhere.We confirm that the manuscript has been read and approved by all named authors and that there are no other persons who satisfied the criteria for authorship but are not listed. We further confirm that the order of authors listed in the manuscript has been approved by the undersigned.We understand that the Corresponding Author is the sole contact for the editorial process. The corresponding author “M<b>s.G.Sujatha</b>” is responsible for communicating with the other authors about process, submissions of revisions, and final approval of proofs.”
: The authors have NO affiliations with or involvement in any organization or entity with any financial interest (such as honoraria; educational grants; participation in speakers’ bureaus; membership, employment, consultancies, stock ownership, or other equity interest; and expert testimony or patent-licensing arrangements), or non-financial interest (such as personal or professional relationships, affiliations, knowledge or beliefs) in the subject matter or materials discussed in this manuscript.