Liu, Dongling
Deng, Xiaocong
Tai, Jinsong
Yang, Shicong
Wei, Kuixian http://orcid.org/0000-0002-3138-1956
Ma, Wenhui
Funding for this research was provided by:
The National Natural Science Foundation of China (U1902219)
The Yunnan Young and Middle-aged Academic and Technical Leader Reserve Talent Project (2018HB009)
Yunnan Outstanding Youth Science Foundation (202101AV070007)
The Major Science and Technology Projects in Yunnan Province (2019ZE007, 202002AB080002)
Article History
Received: 20 December 2021
Accepted: 2 April 2022
First Online: 9 April 2022
Declarations
:
: The data of this submission required ethics approval and are in compliance with ethical standards.
: Not applicable.
: Not applicable.
: The authors declare that they have no financial or personal relationships with other people or organizations that may have inappropriately influenced this work. Moreover, there is no professional or other personal interest of any nature or kind in any product, service, and/or company that could be construed as influencing the position presented in, or the review of, the manuscript entitled, “Formation mechanism of SiC in the diffusion couple interface during the MG-Si production process.”
: All authors and associated personnel are aware of and agree to the content of this submission.