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Band Gap and Drain Dielectric Pocket Engineered Si0.2Ge0.8/GaAs Junctionless TFET with Dual Dielectric Gate for Ambipolar Suppression and Electrical Performance Enhancement

Crossref DOI link: https://doi.org/10.1007/s12633-022-02192-7

Published Online: 2022-11-04

Published Print: 2023-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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