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Impact of T-Shape Drain Doping Engineering on the Analog/RF and High-Frequency Noise Parameters of Junctionless Si/ Si0.7Ge0.3 FET: A Numerical Simulation Study

Crossref DOI link: https://doi.org/10.1007/s12633-024-03155-w

Published Online: 2024-10-11

Published Print: 2024-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Ejlali, Rayhaneh

Vadizadeh, Mahdi

Haji-Nasiri, Saeed

Kashaniniya, Alireza

Dana, Arash
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Text and Data Mining valid from 2024-10-11

Version of Record valid from 2024-10-11
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Article History

Received: 12 June 2024

Accepted: 19 September 2024

First Online: 11 October 2024

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