A Physics Based 3D Analytical Model for Si-SiGe-Si Stacked Channel Tri-gate Junctionless FinFET
Crossref DOI link: https://doi.org/10.1007/s12633-025-03324-5
Published Online: 2025-04-29
Published Print: 2025-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Singh, Devender pal
Yadav, Menka
Text and Data Mining valid from 2025-04-29
Version of Record valid from 2025-04-29
Article History
Received: 5 November 2024
Accepted: 18 April 2025
First Online: 29 April 2025
Declarations
:
: The authors declare no competing interests.