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An Optimized Hetero-gate Bandgap-Engineered SOI PNPN TFET with Hetero-dielectric BOX for Near-Complete Suppression of Ambipolar Current

Crossref DOI link: https://doi.org/10.1007/s12633-025-03332-5

Published Online: 2025-05-14

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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