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A Novel D-Mode Triple-Layer Cap Recessed-Gate Al0.20Ga0.80N/GaN HEMT for Radio Frequency and Low Noise Applications

Crossref DOI link: https://doi.org/10.1007/s12633-025-03486-2

Published Online: 2025-12-01

Published Print: 2026-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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