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Overcoming Silicon MOSFET Limitations with Chirality-Engineered CNTFETs: A Ternary Half Adder Demonstration for Next-Generation Nanoelectronics

Crossref DOI link: https://doi.org/10.1007/s12633-025-03551-w

Published Online: 2025-12-01

Published Print: 2026-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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