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High-Linearity, Temperature-Stable, Low-Noise CMOS-Compatible T-Shaped Drain Doping JLFET: Optimized LNA Designs for GNSS, 6G, and Multi-Band Applications from L-Band to V/W-Bands

Crossref DOI link: https://doi.org/10.1007/s12633-026-03670-y

Published Online: 2026-02-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Ejlali, Reyhaneh

Haji-Nasiri, Saeed

Vadizadeh, Mahdi

Kashaniniya, Alireza

Dana, Arash
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Text and Data Mining valid from 2026-02-07

Version of Record valid from 2026-02-07
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Article History

Received: 15 March 2025

Accepted: 30 January 2026

First Online: 7 February 2026

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: The authors confirm that this manuscript has not been published previously.

: Not applicable.

: Yes. All authors agree to participate and all permission is granted.

: The authors agree to publish.

: All authors have been informed before submitting the manuscript.

: The authors declare no competing interests.

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