Effect of built-in-polarization field on relaxation time and mean free path of phonons in InxGa1-xN/GaN quantum well
Crossref DOI link: https://doi.org/10.1007/s12648-016-0836-7
Published Online: 2016-02-17
Published Print: 2016-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Gedam, V.
Pansari, A.
Sahoo, B. K.
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