The electrical properties of photodiodes based on nanostructure gallium doped cadmium oxide/p-type silicon junctions
Crossref DOI link: https://doi.org/10.1007/s12648-016-0952-4
Published Online: 2017-01-05
Published Print: 2017-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Çavaş, M.
Yakuphanoğlu, F.
Karataş, Ş.
License valid from 2017-01-05