Incorporation of MoS2 nanoflakes into poly(3-hexylthiophene)/n-type Si devices to improve the rectification behavior and optoelectronic performance
Crossref DOI link: https://doi.org/10.1007/s12648-018-1252-y
Published Online: 2018-07-13
Published Print: 2018-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wu, Chang-Lin
Lin, Yow-Jon
Funding for this research was provided by:
Ministry of Science and Technology, Taiwan (106-2112-M-018-001-MY3)
Text and Data Mining valid from 2018-07-13
Article History
Received: 16 December 2017
Accepted: 5 July 2018
First Online: 13 July 2018