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Modeling of shallow extension engineered dual metal surrounding gate (SEE-DM-SG) MOSFET gate-induced drain leakage (GIDL)

Crossref DOI link: https://doi.org/10.1007/s12648-020-01704-8

Published Online: 2020-03-05

Published Print: 2021-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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