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Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate)

Crossref DOI link: https://doi.org/10.1007/s12648-020-01818-z

Published Online: 2020-08-05

Published Print: 2021-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Su, Ting-Hong

Chen, Ming-Yang

Huang, Wei-Shiuan

Lin, Yow-Jon https://orcid.org/0000-0001-7225-1341
Funding

Funding for this research was provided by:

Ministry of Science and Technology, Taiwan (106-2112-M-018-001-MY3)
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Text and Data Mining valid from 2020-08-05

Version of Record valid from 2020-08-05
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Article History

Received: 23 June 2019

Accepted: 24 February 2020

First Online: 5 August 2020

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