Influence of LaCl3 concentration and annealing temperature on the diode ideality factor of LaF3/porous-silicon structure prepared by chemical bath deposition technique
Crossref DOI link: https://doi.org/10.1007/s13204-014-0358-6
Published Online: 2014-10-04
Published Print: 2015-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hafijur Rahman, Md.
Ismail, Abu Bakar Md.
License valid from 2014-10-04
