Dependency of built-in potential of LaF3/porous-silicon heterostructure prepared by chemical bath deposition technique on the concentration of LaCl3 and annealing temperature
Crossref DOI link: https://doi.org/10.1007/s13204-014-0391-5
Published Online: 2014-12-27
Published Print: 2015-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rahman, Md. Hafijur
Ismail, Abu Bakar Md.
License valid from 2014-12-27
