Document is current

Any future updates will be listed below

Sol–gel derived BST (BaxSr1−xTiO3) thin film ferroelectrics for non-volatile memory application with metal–ferroelectric–semiconductor (MFS) structure

Crossref DOI link: https://doi.org/10.1007/s13204-020-01481-0

Published Online: 2020-06-13

Published Print: 2020-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

About CrossMark