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Characterization of InGaN by Means of I–V Measurements of Respective Light-Emitting Diode (LED) by DLTS

Crossref DOI link: https://doi.org/10.1007/s13369-014-1483-y

Published Online: 2014-11-20

Published Print: 2015-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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