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Advancing Electrical and Analog/RF Performance in Dual-Gate AlGaN/GaN MOSHEMT for High-Power and High-Frequency Applications

Crossref DOI link: https://doi.org/10.1007/s13369-024-09924-4

Published Online: 2025-01-07

Published Print: 2025-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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