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Room temperature electroluminescence from n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction device grown by PLD

Crossref DOI link: https://doi.org/10.1007/s13391-013-2206-3

Published Online: 2014-05-10

Published Print: 2014-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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