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Formation of solution-processed multistacked ferroelectric layers for performance improvement of ferroelectric-gated pentacene field-effect transistors

Crossref DOI link: https://doi.org/10.1007/s13391-014-3380-7

Published Online: 2014-07-10

Published Print: 2014-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy