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Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility

Crossref DOI link: https://doi.org/10.1007/s13391-014-4067-9

Published Online: 2014-11-10

Published Print: 2014-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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