Fabrication of a high-performance poly-Si thin-film transistor using a poly-Si film prepared by silicide-enhanced rapid thermal annealing process
Crossref DOI link: https://doi.org/10.1007/s13391-014-4095-5
Published Online: 2014-11-10
Published Print: 2014-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yang, Yong Ho
Ahn, Kyung Min
Kang, Seung Mo
Moon, Sun Hong
Ahn, Byung Tae
Text and Data Mining valid from 2014-11-01