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2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments

Crossref DOI link: https://doi.org/10.1007/s13391-015-4208-9

Published Online: 2015-05-10

Published Print: 2015-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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