Development of wider bandgap n-type a-SiOx:H and μc-SiOx:H as both doped and intermediate reflecting layer for a-Si:H/a-Si1-xGex:H tandem solar cells
Crossref DOI link: https://doi.org/10.1007/s13391-016-4004-1
Published Online: 2016-07-10
Published Print: 2016-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, Po-Wei
Chen, Pei-Ling
Tsai, Chuang-Chuang
License valid from 2016-07-01
