Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors
Crossref DOI link: https://doi.org/10.1007/s13391-017-1613-2
Published Online: 2017-09-10
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Sang Tae
Shin, Yeonwoo
Yun, Pil Sang
Bae, Jong Uk
Chung, In Jae
Jeong, Jae Kyeong
License valid from 2017-09-01