Document is current

Any future updates will be listed below

Recrystallization of Ge thin film on SiO2 substrates using a two-step annealing process

Crossref DOI link: https://doi.org/10.1007/s13391-017-6198-2

Published Online: 2016-11-28

Published Print: 2017-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

About CrossMark