Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor
Crossref DOI link: https://doi.org/10.1007/s13391-017-7137-y
Published Online: 2017-10-02
Published Print: 2018-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shin, Hyun Wook
Son, Jong Yeog
License valid from 2017-10-02
