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Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers

Crossref DOI link: https://doi.org/10.1007/s13391-022-00336-w

Published Online: 2022-02-11

Published Print: 2022-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Ahn, Hyun-Min

Kwon, Young-Ha

Seong, Nak-Jin

Choi, Kyu-Jeong

Hwang, Chi-Sun

Yoon, Sung-Min https://orcid.org/0000-0001-6535-3411
Funding

Funding for this research was provided by:

Ministry of Trade, Industry and Energy (20010402)

National Research Foundation of Korea (NRF-2020M3H4A3081897)
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Article History

Received: 21 December 2021

Accepted: 22 January 2022

First Online: 11 February 2022

Declarations

:

: The authors declare no competing financial interests or no personal relationships that could have influenced the work reported in this paper.

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