Controlled Self Compliance Filamentary Memory Behavior in Al/NiFe2O4/FTO Resistive Switching Device
Crossref DOI link: https://doi.org/10.1007/s40010-023-00842-y
Published Online: 2023-08-06
Published Print: 2023-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pandey, Vidit
Nehla, Priyanka
Munjal, Sandeep
Text and Data Mining valid from 2023-08-06
Version of Record valid from 2023-08-06
Article History
Received: 3 December 2022
Revised: 14 July 2023
Accepted: 17 July 2023
First Online: 6 August 2023
Declarations
:
: The authors declare that they have no conflict of interest.