Charge-trapping memory device based on a heterostructure of MoS2 and CrPS4
Crossref DOI link: https://doi.org/10.1007/s40042-021-00154-7
Published Online: 2021-04-15
Published Print: 2021-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shin, Minjeong
Lee, Mi Jung
Yoon, Chansoo
Kim, Sohwi
Park, Bae Ho
Lee, Sungmin
Park, Je-Geun
Text and Data Mining valid from 2021-04-15
Version of Record valid from 2021-04-15
Article History
Received: 4 March 2021
Revised: 23 March 2021
Accepted: 23 March 2021
First Online: 15 April 2021