Extremely high photoconductivity ultraviolet-light sensor using amorphous In–Ga–Zn–O thin-film-transistor
Crossref DOI link: https://doi.org/10.1007/s40042-021-00205-z
Published Online: 2021-05-28
Published Print: 2021-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Park, Jin-Seong
Seo, Hyung-Tak
Park, Jea-Gun
Text and Data Mining valid from 2021-05-28
Version of Record valid from 2021-05-28
Article History
Received: 12 May 2021
Revised: 17 May 2021
Accepted: 17 May 2021
First Online: 28 May 2021
Declarations
:
: The authors declare no conflict of interest.