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Optical and electrical characterizations of volatile doping effect originated from bilayer photoresist process in MoS2 field-effect transistors

Crossref DOI link: https://doi.org/10.1007/s40042-022-00525-8

Published Online: 2022-06-22

Published Print: 2022-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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