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Chemical mechanical planarization mechanism of epitaxially grown Ge-film for sequential integrating 3D-structured transistor cells

Published Online: 2022-11-14

Published Print: 2022-12

Authors

Bae, Jae-Young

Han, Man-Hyup

Shim, Tae-Hun

Park, Jea-Gun https://orcid.org/0000-0002-5831-2854
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Text and Data Mining valid from 2022-11-14

Version of Record valid from 2022-11-14
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Article History

Received: 24 October 2022

Revised: 3 November 2022

Accepted: 3 November 2022

First Online: 14 November 2022

Declarations

:

: The authors declare that they have no conflict of interest.

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