The light emission and in-plane polarization ratio of (0001) GaInN/GaN quantum well structures grown on a stripe-shaped cavity engineered sapphire substrate
Crossref DOI link: https://doi.org/10.1007/s40042-023-00812-y
Published Online: 2023-04-27
Published Print: 2023-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Jong-Ryeol
Text and Data Mining valid from 2023-04-27
Version of Record valid from 2023-04-27
Article History
Received: 3 April 2023
Revised: 7 April 2023
Accepted: 7 April 2023
First Online: 27 April 2023