Transformation of charge polarity at HfO2/GaN interfaces through post-deposition annealing
Crossref DOI link: https://doi.org/10.1007/s40042-024-01017-7
Published Online: 2024-02-11
Published Print: 2024-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Han, Yoolim
Go, Ju Mi
Yang, Kyungmi
Kim, Minsu
Kim, Kwangeun http://orcid.org/0000-0001-6942-7481
Text and Data Mining valid from 2024-02-11
Version of Record valid from 2024-02-11
Article History
Received: 5 December 2023
Revised: 10 January 2024
Accepted: 12 January 2024
First Online: 11 February 2024