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Optimization of growth conditions for high-Ge-content Si1-xGex epitaxial layers using ultra-high-vacuum CVD for high-performance semiconductor applications

Crossref DOI link: https://doi.org/10.1007/s40042-024-01261-x

Published Online: 2025-01-16

Published Print: 2025-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Kim, Ji-Hoon

Park, Jea-Gun
Funding

Funding for this research was provided by:

Ministry of Trade, Industry and Energy (RS-2023-00235634, RS-2023-00235634)
License Information

Text and Data Mining valid from 2025-01-16

Version of Record valid from 2025-01-16
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Article History

Received: 18 November 2024

Revised: 4 December 2024

Accepted: 13 December 2024

First Online: 16 January 2025

Declarations

:

: The authors declare no competing interests.

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