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Influence of diverse dielectric materials on the performance of enhancement-mode AlGaN/GaN MISHEMTs with a β-Ga2O3 buffer and substrate for RF and power applications

Crossref DOI link: https://doi.org/10.1007/s40042-025-01318-5

Published Online: 2025-02-21

Published Print: 2025-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Chinnaswamy, Sivamani

Palanirajan, Gowtham

Vigneshwari, N.

Moses, Jayasheela

Natarajan, Ramkumar

Murugapandiyan, P.
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Text and Data Mining valid from 2025-02-21

Version of Record valid from 2025-02-21
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Article History

Received: 26 November 2024

Revised: 6 February 2025

Accepted: 11 February 2025

First Online: 21 February 2025

Declarations

:

: The authors declare that there is no conflict of interest reported in this paper. The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

: Not applicable.

: Not applicable as the manuscript does not contain any data from individual.

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