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Comprehensive analysis of the effect of optimal gate dielectric materials on stability, reliability, and electrical performance of a-Si:H thin-film transistor

Crossref DOI link: https://doi.org/10.1007/s40042-025-01383-w

Published Online: 2025-05-14

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Ben Othmane, Djemâa

Doghmane, Nozha El Ahlem

Doghmane, Abdellaziz
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Text and Data Mining valid from 2025-05-14

Version of Record valid from 2025-05-14
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Article History

Received: 4 April 2025

Revised: 7 April 2025

Accepted: 28 April 2025

First Online: 14 May 2025

Declarations

:

: The authors declare no conflict of interests.

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