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High-performance GaN-based HEMTs with β-Ga2O3 buffer layer engineering for millimeter-wave applications

Published Online: 2025-07-16

Published Print: 2025-09

Authors

Nirmala Devi, K.

Keerthiga, G.

Ravi, S.

Murugapandiyan, P.
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Text and Data Mining valid from 2025-07-16

Version of Record valid from 2025-07-16
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Article History

Received: 30 March 2025

Revised: 11 June 2025

Accepted: 9 July 2025

First Online: 16 July 2025

Declarations

:

: The authors declare no competing interests.

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