A numerical study of the nanoribbon field-effect transistors under the ballistic and dissipative transport
Crossref DOI link: https://doi.org/10.1007/s40089-017-0219-x
Published Online: 2017-08-20
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ghoreishi, Seyed Saleh
Yousefi, Reza
Saghafi, Kamyar
Aderang, Habib
License valid from 2017-08-20