Representation of heterostructure electrically doped nanoscale tunnel FET with Gaussian-doping profile for high-performance low-power applications
Crossref DOI link: https://doi.org/10.1007/s40089-018-0250-6
Published Online: 2018-09-28
Published Print: 2018-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Abedini, Maryam
Sedigh Ziabari, Seyed Ali
Eskandarian, Abdollah
Text and Data Mining valid from 2018-09-28
Article History
Received: 6 February 2018
Accepted: 6 September 2018
First Online: 28 September 2018