Effects on selective epitaxial growth of strained-SiGe p-MOSFETs on various (001) Si recess structures
Crossref DOI link: https://doi.org/10.1007/s40094-018-0272-5
Published Online: 2018-01-30
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hong, Min-Hao
Perng, Dung-Ching http://orcid.org/0000-0003-1916-8244
Text and Data Mining valid from 2017-12-01
Article History
Received: 27 October 2017
Accepted: 8 January 2018
First Online: 30 January 2018