Optimizing the performance of extended-gate field-effect transistor (EGFET) pH sensor by regulating the structural properties of the nanostructured porous silicon layer
Crossref DOI link: https://doi.org/10.1007/s40094-020-00403-3
Published Online: 2021-02-03
Published Print: 2020-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Alwan, Alwan M.
Zayer, Mehdi Q.
Jabbar, Allaa A.
Dheyab, Amer B.
Text and Data Mining valid from 2020-12-01
Version of Record valid from 2020-12-01
Article History
Received: 8 June 2020
Accepted: 10 December 2020
First Online: 3 February 2021