Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels
Crossref DOI link: https://doi.org/10.1007/s40820-014-0016-2
Published Online: 2014-10-23
Published Print: 2015-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Van, Ngoc Huynh
Lee, Jae-Hyun
Whang, Dongmok
Kang, Dae Joon
License valid from 2014-10-23