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Growth of the orthorhombic phase and inhibition of charge injection in ferroelectric HfO2-based MFIS memory devices with a high-permittivity dielectric seed layer

Crossref DOI link: https://doi.org/10.1007/s40843-022-2124-7

Published Online: 2022-07-27

Published Print: 2023-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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